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Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Identifieur interne : 005740 ( Main/Repository ); précédent : 005739; suivant : 005741

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Auteurs : RBID : Pascal:09-0468545

Descripteurs français

Pascal (Inist)
- Champ électrique, Ionisation, Photodiode avalanche, Simulation numérique, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, Semiconducteur III-V, Indium Phosphure, Dispositif optoélectronique, InGaAs, InP, As Ga In, In P, InGaAs/InP, 0130C, 8560D.

English descriptors

KwdEn :
- Avalanche photodiodes, Binary compound, Electric field, Gallium Arsenides, III-V semiconductors, Indium Arsenides, Indium Phosphides, Ionization, Numerical simulation, Optoelectronic device, Ternary compound.

Abstract

Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p⁺-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.

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<author><name sortKey="Vasileuski, Yury" uniqKey="Vasileuski Y">Yury Vasileuski</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Logoiski trakt 22</s1>
<s2>220090 Minsk</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Biélorussie</country>
<wicri:noRegion>220090 Minsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Malyshev, Sergei" uniqKey="Malyshev S">Sergei Malyshev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Logoiski trakt 22</s1>
<s2>220090 Minsk</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Biélorussie</country>
<wicri:noRegion>220090 Minsk</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chizh, Alexander" uniqKey="Chizh A">Alexander Chizh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Stepanov Institute of Physics, National Academy of Sciences of Belarus, Logoiski trakt 22</s1>
<s2>220090 Minsk</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
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<country>Biélorussie</country>
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<seriesStmt><idno type="ISSN">0306-8919</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Avalanche photodiodes</term>
<term>Binary compound</term>
<term>Electric field</term>
<term>Gallium Arsenides</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Ionization</term>
<term>Numerical simulation</term>
<term>Optoelectronic device</term>
<term>Ternary compound</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Champ électrique</term>
<term>Ionisation</term>
<term>Photodiode avalanche</term>
<term>Simulation numérique</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium Phosphure</term>
<term>Dispositif optoélectronique</term>
<term>InGaAs</term>
<term>InP</term>
<term>As Ga In</term>
<term>In P</term>
<term>InGaAs/InP</term>
<term>0130C</term>
<term>8560D</term>
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<front><div type="abstract" xml:lang="en">Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p<sup>+</sup>
-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.</div>
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<fA15 i1="01"><s1>Department of Electronics, University of York</s1>
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Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri